منابع مشابه
Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures.
We demonstrate that the flow of a longitudinal unpolarized current through a ballistic two-dimensional electron gas with Rashba spin-orbit coupling will induce a nonequilibrium spin accumulation which has opposite signs for the two lateral edges and is, therefore, the principal observable signature of the spin Hall effect in two-probe semiconductor nanostructures. The magnitude of its out-of-pl...
متن کاملMesoscopic spin Hall effect in multiprobe ballistic spin-orbit-coupled semiconductor bridges
We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas 2DEG in semiconductor heterostructure will induce a pure spin current, which is not accompanied by any net charge flow, in the transverse voltage probes. Its magnitude can be tuned by the Rashba spin-orbit SO coupling and, moreover, it is resilient...
متن کاملSpin hall edge spin polarization in a ballistic 2D electron system.
Universal properties of the spin Hall effect in ballistic 2D electron systems are addressed. The net spin polarization across the edge of the conductor is second order, approximately lambda2, in spin-orbit coupling constant independent of the form of the boundary potential, with the contributions of normal and evanescent modes each being approximately radical lambda but of opposite signs. This ...
متن کاملTransverse spin-orbit force in the spin Hall effect in ballistic semiconductor wires
We introduce the spinand momentum-dependent force operator, which is defined by the Hamiltonian of a clean semiconductor quantum wire with homogeneous Rashba spin-orbit SO coupling attached to two ideal i.e., free of spin and charge interactions leads. Its expectation value in the spin-polarized electronic wave packet injected through the leads explains why the center of the packet gets deflect...
متن کاملBallistic-Ohmic quantum Hall plateau transition in a graphene p-n junction
Recent quantum Hall experiments conducted on disordered graphene p-n junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums’ resistances. However in the ballistic limit, theory predicts the existence of chirality-dependent quantum Hall plateaus in a p-n junction. We show that two distinctively separate processes are required for th...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1997
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.120034